An influence of a nitridation process on a self lift-off
phenomenon during the HVPE crystallization of GaN on a MOCVD-GaN/sapphire
template with photolitographically patterned Ti mask was investigated. Duration
of the nitridation process and flows of reagents in this process were modified.
A correlation between degradation degree of a GaN template surface and the
conditions of the nitridation process was observed. It was also observed that
the degree of degradation had a direct influence on a moment of the self
lift-off phenomenon (separation of a HVPE-GaN crystal from the template). It
was shown that the best free-standing HVPE-GaN crystals, in sense of their
structural quality, were obtained when the separation process occurred during
cooling down step.
Highlights
•
The influence of the nitridation process on the self lift-off was investigated.
•
Conditions of nitridation affect on degree of degradation of the GaN template.
•
The moment of the lift-off depends on conditions of nitridation.
•
Degree of degradation of substrate was important for obteining no cracked
crystal.
Source:
Journal of Crystal Growth
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ReplyDeletesapphire substrate