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PAM-XIAMEN, a leading GaN substrate manufacturer, offer GaN substrates and its relative wafers. GaN substrate is used in UV or blue Laser Diodes for next generation DVDs, high brightness LEDs for general lighting and high power, high frequency transistors for cellular phone base stations and photovoltaic applications.We continued to develop new GaN substrates such as large-diameter c-plane substrates as well as nonpolar/semipolar GaN substrates. In particular, we overcame the green gap problem and developed true green laser diodes by selecting an optimal crystal plane. And now we give a brief troduction of GaN substrate as follows:



C plane, n type GaN substrate: 2”, 1”, 
C plane, semi-insulating GaN substrate: 2”, 1”, 
A plane, n type GaN substrate
M plane, n type GaN substrate

1)15mm,10mm,5mm ",1.5",2"Free-standing GaN substrate
Orientation:C-axis(0001)+/-0.5°
Conduction Type:N-type
Size:(50.8)+/-1mm
Thickness:260+/-20um
Primary Flat Location:(1-100)+/-0.5°
Primary Flat Length:16+/-1mm
Primary Flat Location:(1-100)+/-0.5°
Secondary Flat Length:6+/-1mm
Dislocation Density:<5x106cm-2
Marco Defect Density:A grade<=2cm-2 
Resistivity(300K):<0.5Ω·cm
TTV:<=15um
BOW:<=20um
Surface Finish:Front Surface:Ra<0.2nm.Epi-ready polished
C plane, semi-insulating GaN substrate

2)15mm,10mm,5mm ",1.5",2"Free-standing GaN substrate
Orientation:C-axis(0001)+/-0.5°
Conduction Type:Semi-insulating
Size:230+/-20um(280+/-20um)
Thickness:260+/-20um
Dislocation Density:<5x106cm-2
Marco Defect Density:0cm-2 
Resistivity(300K):>106Ω·cm
TTV:<=15um
BOW:<=20um
Surface Finish:Front Surface:Ra<0.2nm.Epi-ready polished

3)2" GaN Templates Epitaxy on Sapphire Substrates
  Orientation:C-axis(0001)+/-0.5°
  Size:50mm±0.1dia.
  Conduction Type:P-type
  Dopant:Mg doped 
  Thickness:5um,20um,30um,50um,100um
  Resistivity(300K):<1Ω·cm or custom
  Dopant Concentration:1E17(cm-3)  or custom
  Substrate Structure:GaN on Sapphire(0001)
  Surface Finish:Single or Double Side Polished,epi-ready
  Usable Area:≥ 90 %


And also provide for:
PAM-XIAMEN has established the manufacturing technology for freestanding (gallium nitride)GaN substrate wafer, which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density.
A plane, n type GaN substrate
M plane, n type GaN substrate
GaN on sapphire

GaN substrate market:
Near- and long-term market applications for bulk GaN substrates are examined, along with motivations and challenges for adopting the substrate technology for specific device applications. The near-term demand for bulk GaN is driven primarily by laser diodes, while solid state lighting and power electronics will drive the long-term demand. Challenges to achieving broad market penetration include increased volume production and reduced manufacturing cost, which are needed to penetrate incumbent GaN device technologies based on foreign substrates.

Related Products:
gan template
blue/green/red GaN
gan substrate growth
gan substrate sumitomo
gan substrate led
gan substrates progress status 


If you find them interesting, please visit us: www.qualitymaterial.net or contact with us: gan@powerwaywafer.com.

2 comments:

  1. Is it possible to use 4” non-patterned sapphire for fabrication?

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    Replies
    1. Not possible, currently all the manufacturers swift to patterned sapphire based wafer, including us, however if you really need flat sapphire based wafer, we we can offer 2" size.

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