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PAM-XIAMEN, a leading GaN substrate manufacturer, offer GaN substrates and its relative wafers. GaN substrate is used in UV or blue Laser Diodes for next generation DVDs, high brightness LEDs for general lighting and high power, high frequency transistors for cellular phone base stations and photovoltaic applications.We continued to develop new GaN substrates such as large-diameter c-plane substrates as well as nonpolar/semipolar GaN substrates. In particular, we overcame the green gap problem and developed true green laser diodes by selecting an optimal crystal plane. And now we give a brief troduction of GaN substrate as follows:

C plane, n type GaN substrate: 2”, 1”,

C plane, semi-insulating GaN substrate: 2”, 1”,

A plane, n type GaN substrate

M plane, n type GaN substrate

1)15mm,10mm,5mm ",1.5",2"Free-standing GaN substrate

Orientation:C-axis(0001)+/-0.5°

Conduction Type:N-type

Size:(50.8)+/-1mm

Thickness:260+/-20um

Primary Flat Location:(1-100)+/-0.5°

Primary Flat Length:16+/-1mm

Primary Flat Location:(1-100)+/-0.5°

Secondary Flat Length:6+/-1mm

Dislocation Density:<5x106cm-2

Marco Defect Density:A grade<=2cm-2

Resistivity(300K):<0.5Ω·cm

TTV:<=15um

BOW:<=20um

Surface Finish:Front Surface:Ra<0.2nm.Epi-ready polished C plane, semi-insulating GaN substrate

2)15mm,10mm,5mm ",1.5",2"Free-standing GaN substrate

Orientation:C-axis(0001)+/-0.5°

Conduction Type:Semi-insulating

Size:230+/-20um(280+/-20um)

Thickness:260+/-20um

Dislocation Density:<5x106cm-2

Marco Defect Density:0cm-2

Resistivity(300K):>106Ω·cm

TTV:<=15um

BOW:<=20um

Surface Finish:Front Surface:Ra<0.2nm.Epi-ready polished 3)2" GaN Templates Epitaxy on Sapphire Substrates   Orientation:C-axis(0001)+/-0.5°   Size:50mm±0.1dia.   Conduction Type:P-type   Dopant:Mg doped    Thickness:5um,20um,30um,50um,100um   Resistivity(300K):<1Ω·cm or custom   Dopant Concentration:1E17(cm-3)  or custom   Substrate Structure:GaN on Sapphire(0001)   Surface Finish:Single or Double Side Polished,epi-ready   Usable Area:≥ 90 %

And also provide for:

A plane, n type GaN substrate

M plane, n type GaN substrate

GaN on sapphire

GaN substrate market:

Near- and long-term market applications for bulk GaN substrates are examined, along with motivations and challenges for adopting the substrate technology for specific device applications. The near-term demand for bulk GaN is driven primarily by laser diodes, while solid state lighting and power electronics will drive the long-term demand. Challenges to achieving broad market penetration include increased volume production and reduced manufacturing cost, which are needed to penetrate incumbent GaN device technologies based on foreign substrates.

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