Cubic GaN (c-GaN) could be grown on sapphire (0 0 0 1) substrates by metalorganic molecular beam epitaxy (MOMBE) under a Ga-rich condition at a relatively high growth temperature (800°C). The growth was carried out with two different substrate treatments, either nitridation or deposition of a GaN buffer layer at a low temperature (400°C). In both case, the grown layer contains not only c-GaN but also hexagonal GaN (h-GaN). The ratio of h-GaN to c-GaN is greatly reduced by using the buffer layer. Based on the experimental results, a growth model of c-GaN is proposed.
Source:Journal of Crystal Growth
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