► We investigated the growth of non-polar a-plane and m-plane GaN.
► Control of the V/III ratio is effective for reducing contamination in GaN.
► Control of the growth temperature is effective for reducing contamination in GaN.
► We realized high-quality nonpolar a-plane AlGaN/GaN wafer.
► The results of this study can be applied to nonpolar a-plane HFETs.
Source: Journal of Crystal Growth
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