Dr. Shaka, said, "We are pleased to offer larger native SI gallium nitride(GaN) to our customers including many who are developing better and more reliable high frequency high power GaN transistors. Our 50mm dia.native SI GaN product has excellent resistivity properties just like our smaller SI GaN substrates, as corroborated by recent electrical resistivity mapping measurements carried out. The larger size and availability improve our native SI GaN boule growth and wafering processes." and "Our customers can now benefit from the increased device yield expected when developing advanced transistors on a larger square substrate. Our larger square SI GaN substrates are natural by products of our ongoing efforts, currently we are devoted to continuously develop round three-inch and four-inch native SI GaN substrates."
PAM-XIAMEN's improved SI GaN product line has benefited from strong tech. support from Native University and Laboratory Center.
About Xiamen Powerway Advanced Material Co., Ltd
Found in 1990,Xiamen Powerway Advanced Material Co., Ltd (PAM-XIAMEN) is a leading manufacturer of compound semiconductor material in China. PAM-XIAMEN develops advanced crystal growth and epitaxy technologies, manufacturing processes, engineered substrates and semiconductor devices. PAM-XIAMEN's technologies enable higher performance and lower cost manufacturing of semiconductor wafer.
In 2001,PAM-XIAMEN has been involved in GaN research.In 2009,PAM-XIAMEN has been mass production for GaN epitaxy on Sapphire and freestanding GaN single crystal wafer substrate which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,PAM-XIAMEN's GaN wafer has low defect density and less or free macro defect density.Currently PAM-XIAMEN can offer low defect density native (free-standing) GaN in customer-defined orientation including polar (c-plane Ga-face or N-face) and non-polar (a-plane and m-plane), GaN and AlN templates grown on sapphire and Si or SiC substrates, and ultra-high purity polycrystalline GaN.
GaN(Gallium nitride), which is a compound semiconductor, it is a hard, high melting point materials, the melting point of about 1700 ° C, GaN is a high degree of ionizationof III-Vcompound (0.5 or 0.43). At atmospheric pressure, the GaN crystal is generally hexagonal wurtzite structure. In a cell four atoms, the atomic volume is about half that ofthe GaAs. If you need more information about GaN, please visit: http://www.powerwaywafer.com/What-is-GaN.html