Gallium
nitride pin rectifiers grown on bulk GaN substrate have been
fabricated and characterised. The device structures were grown by metal organic
chemical vapour deposition (MOCVD) on free-standing GaN substrates. The
diode structure consisted of an n+-GaN layer, followed by a 2.5
mum unintentionally doped i-GaN layer, and a p-type GaN layer
capped with a p++-GaN cap layer. The mesa-structure pin diodes
exhibited a blocking voltage as large as Vr~-540 V, and a reverse
current density of Ir~0.1 A/cm2 at Vr~-500 V. The
forward voltage drop is only 4.4 V at a forward current density of ~100A/cm2,
with an on-resistance of 3 mOmega middot cm2 for a circular
device with an 80 mum mesa diameter. The breakdown voltage and on-resistance
are believed to be the best values reported for vertical mesa GaN pin
rectifiers grown on bulk GaN substrates with comparable i-layer
thickness
Source:CS
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