Growth of high quality N-polar n-GaN on vicinal C-face n-SiC substrates for vertical conducting devices

Highlights

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The full width at half maximum of N-polar GaN$\mathrm{}\stackrel{}{\mathrm{}}\mathrm{}$ω-rocking curve is ∼335 arcsec.

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SiN_x interlayer is an effective way to improve the properties of N-polar GaN films.

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Our structure is vertical conducting.

Abstract

High quality N-polar n-type GaN films were deposited on vicinal C-face n-SiC substrates by metal organic chemical vapor deposition for vertical conducting devices. We employed the SiN_x interlayer to N-polar GaN growth and studied the effect of SiN_xinterlayer on the properties of N-polar GaN. We found that the properties of N-polar films were greatly improved by using SiN_x interlayer as characterized by X-ray diffraction, photoluminescence, and I-V measurements. N-polar n-type GaN films with SiN_x interlayer exhibited a full width at half maximum of 422 arcsec for (0002) omega scan and 335 arcsec for $\mathrm{}\stackrel{}{\mathrm{}}\mathrm{}$ omega scan, respectively. Integrated intensity ratio of near-band-edge emission and yellow-luminescence was increased by a factor of 4 by using SiN_x interlayer. Besides, the resistance of the vertical structure with SiN_xinterlayer was reduced by 25% in comparison with that without SiN_x interlayer.

Keywords

• N-polar GaN; 
• Metalorganic chemical vapor deposition; 
• Vertical conducting; 
• Nitrides
• • • SOURCE:Sciencedirect
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