To improve the performance of GaN power devices, we have investigated the crystalline quality of thick (>20 µm) carbon-doped GaN layers on n-type GaN substrates and templates. The surface morphologies and X-ray rocking curves of carbon-doped GaN layers were improved by using GaN substrates. However, the crystalline quality degraded when the carbon concentration was too high (1 10 cm), even in the case of GaN substrates. High breakdown voltages (approximately 7 kV under a lateral configuration) were obtained for the carbon-doped GaN layers on n-type GaN substrates when the carbon concentration was 5 10 cm. These results indicate that lateral power devices with high breakdown voltage can be fabricated by using thick carbon-doped GaN buffer layers, even on n-type GaN substrates.
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