We investigated the effect of the thickness
of a 3C-SiC buffer layer on the growth of GaN on a Si substrate. GaN samples
with thicknesses of 2.0 and 4.5 µm were grown by metal organic vapor phase
epitaxy. Islands were observed at the initial growth of the GaN samples, and
they became larger and then coalesced with each other with increasing growth
time. The crystalline quality of the GaN samples was affected by the thickness
of the 3C-SiC buffer layer and was improved by increasing their thickness. This
indicates that the crystalline quality trend for thick GaN growth is different
from that for initial GaN growth. Moreover, the GaN sample with a 100-nm-thick
SiC buffer layer had a low initial curvature, and the crystalline qualities on
GaN(0004) and planes were 389 and 460
arcsec for 4.5-µm-thick GaN growth, respectively.
Source:IOPscience
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