In this paper we review the developments of
producing non-polar (i.e. m-plane and a-plane) and semi-polar (i.e.
(20.1)-plane) wafers by ammonothermal method. The growth method and polishing
results are described. We succeeded in producing 26 mm × 26 mm non- and
semi-polar wafers. These wafers possess outstanding structural and optical
properties, with threading dislocation density of the order of 104 cm−3.
Detailed studies of homoepitaxial layers, as well as AlGaN heterostructures are
also presented, showing the potential of studied ammonothermal substrates in
the fabrication of optoelectronic devices.
Source:IOPscience
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