Dec 25, 2019

Selective-area growth of GaN on non- and semi-polar bulk GaN substrates

We carried out the selective-area growth of GaN and fabricated InGaN/GaN MQWs on non- and semi-polar bulk GaN substrates by MOVPE. The differences in the GaN structures and the In incorporation of InGaN/GaN MQWs grown on non- and semi-polar GaN substrates were investigated. In the case of selective-area growth, different GaN structures were obtained on $(20\bar{2}1)$ GaN, $(20\bar{2}\bar{1})$GaN, and $(10\bar{1}0)$ GaN substrates. A repeating pattern of $\{ 1\bar{1}01\} $ and $\{ 1\bar{1}0\bar{1}\} $ facets appeared on $(20\bar{2}1)$ GaN. Then, we fabricated InGaN/GaN MQWs on the facet structures on $(20\bar{2}1)$ GaN. The emission properties characterized by cathodoluminescence were different for $\{ 1\bar{1}01\} $ and $\{ 1\bar{1}0\bar{1}\} $ facets. On the other hand, for InGaN/GaN MQWs on non- and semi-polar GaN substrates, steps along the a-axis were observed by AFM. In particular on $(20\bar{2}1)$GaN, undulations and undulation bunching appeared. Photoluminescence characterization indicated that In incorporation increased with the off-angle from the m-plane and also depended on the polarity.


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