GaN optical devices on free-standing GaN substrates

As a fundamental approach, we have reported the growth of free-standing conducting GaN substrate by hydride vapor phase epitaxy (HVPE) and have successfully demonstrated a homoepitaxially grown LED with top-bottom contact for the first time. We present device characteristics of optical devices on GaNsubstrates and technical issues for surface damage and stability of GaN substrates.

Source:IEEE

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