GaN optical devices on free-standing GaN substrates
As a fundamental approach, we have reported the growth of
free-standing conducting GaN substrate by hydride vapor phase
epitaxy (HVPE) and have successfully demonstrated a homoepitaxially grown LED
with top-bottom contact for the first time. We present device characteristics
of optical devices on GaNsubstrates and technical issues for surface
damage and stability of GaN substrates.
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