Apr 9, 2014

GaN optical devices on free-standing GaN substrates

As a fundamental approach, we have reported the growth of free-standing conducting GaN substrate by hydride vapor phase epitaxy (HVPE) and have successfully demonstrated a homoepitaxially grown LED with top-bottom contact for the first time. We present device characteristics of optical devices on GaNsubstrates and technical issues for surface damage and stability of GaN substrates.


If you need more information about GaN optical devices on free-standing GaN substrates, please visit:http://www.qualitymaterial.net or send us email at gan@powerwaywafer.com.

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