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Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With
Self-Assembled Conical Arrays, please visit:http://www.qualitymaterial.net or
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Apr 9, 2014
Improving Light Output of Vertical-Stand-Type InGaN Light-Emitting Diodes Grown on a Free-Standing GaN Substrate With Self-Assembled Conical Arrays
We
demonstrated the fabrication and study of vertical-stand-type homoepitaxial
light-emitting diodes (VLEDs) on a GaN substrate with conical
array structures. The conical arrays were formed on the N-face surface of the GaN substrate using
a size-controllable polystyrene nanosphere as etch mask. The 20-mA output power
of the VLEDs with flat backside, truncated cone, and cone arrays improved by
magnitudes of 16.5%, 66.8%, and 118.5%, respectively, compared with that of
conventional planar configuration LEDs. These improvements could be attributed
to the increased direct illumination surface and reduction in photon extraction
path length. Moreover, small wavelength redshift proved that the VLED on the GaN substrate did
not suffer from serious thermal effect.
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