To improve the performance of GaN
power devices, we have investigated the crystalline quality of thick (>20
µm) carbon-doped GaN layers on n-type GaN substrates and templates. The surface
morphologies and X-ray rocking curves of carbon-doped GaN layers were improved
by using GaN substrates. However, the crystalline quality degraded when the
carbon concentration was too high (1 × 1020 cm−3), even in the case of GaN
substrates. High breakdown voltages (approximately 7 kV under a lateral
configuration) were obtained for the carbon-doped GaN layers on n-type GaN
substrates when the carbon concentration was 5 × 1019 cm−3. These results
indicate that lateral power devices with high breakdown voltage can be
fabricated by using thick carbon-doped GaN buffer layers, even on n-type GaN
substrates.
Source:IOPscience
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