In this paper, we describe bulk,
free-standing, zinc-blende (cubic) GaN wafers grown by plasma-assisted
molecular beam epitaxy. We have grown GaN layers of up to 60 µm in thickness.
We present the data from characterization measurements that confirm the cubic
nature of the GaN crystals and show that the fraction of the material that is
hexagonal in nature is not more than about 10% in the best thick samples. Cubic
(0 0 1) GaN does not exhibit the spontaneous and piezoelectric polarization
effects associated with (0 0 0 1) c-axis wurtzite GaN. Therefore, the
free-standing GaN wafers we have grown would make ideal lattice-matched
substrates for the growth of cubic GaN-based structures for blue and
ultraviolet optoelectronic devices, and high-power and high-frequency
electronic applications.
Source:IOPscience
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