A GaN growth technique using Ga2O vapor
allows high-temperature growth, which results in high-crystalline GaN. In this
study, we succeeded in increasing the growth rate up to 180 µm/h, and with this
technique, we maintained the crystallinity of the epitaxial layers at the same
level as the crystallinity of the seed substrates [the FWHM of the (0002) GaN
X-ray rocking curve was 71'']. To achieve this improvement, growth occurred on
atomically smooth, damage-free seed substrates prepared by chemical mechanical
polishing (CMP), and these substrates were subjected to a subsequent H2 heating
process. Moreover, for this growth process, both a high temperature (1200 °C)
and a H2/N2 atmosphere were also found to improve crystallinity.
Source:IOPscience
For more information, please visit our website: www.semiconductorwafers.net,
send us email at sales@powerwaywafer.com and powerwaymaterial@gmail.com
This comment has been removed by the author.
ReplyDeleteThis is excellent information which is shared by you. This information is meaningful and magnificent for us to increase our knowledge about it. Keep sharing this kind of information. Thank you. Vapor Intrusion solutions
ReplyDelete