Thick (>20 µm) and high-resistivity carbon-doped GaN-buffer layers grown by metalorganic vapor phase epitaxy on n-type GaN substrates
To improve the performance of GaN power devices, we have investigated the crystalline quality of thick (>20 µm) carbon-doped GaN layers on n-type GaN substrates and templates. The surface morphologies and X-ray rocking curves of carbon-doped GaN layers were improved by using GaN substrates. However, the crystalline quality degraded when the carbon concentration was too high (1 × 1020 cm−3), even in the case of GaN substrates. High breakdown voltages (approximately 7 kV under a lateral configuration) were obtained for the carbon-doped GaN layers on n-type GaN substrates when the carbon concentration was 5 × 1019 cm−3. These results indicate that lateral power devices with high breakdown voltage can be fabricated by using thick carbon-doped GaN buffer layers, even on n-type GaN substrates.
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